Abstract
Silicon nanowires are observed to behave as chemically modulated resistors and exhibit sensitive and fast electrical responses to vapors of common nitro explosives and their degradation by-products. The nanowires were prepared with a top-down nano-fabrication process on a silicon-on-insulator wafer. The surface of the silicon nanowires was modified by plasma treatments. Both hydrogen and oxygen plasma treatments can significantly improve the responses, and oxygen plasma changes the majority carrier from p- to n-type on the surface of silicon nanowire thin films. The sensitivity is found to increase when the cross-section of the nanowires decreases. © 2012 The Royal Society of Chemistry.
| Original language | English |
|---|---|
| Pages (from-to) | 2628-2632 |
| Journal | Nanoscale |
| Volume | 4 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 21 Apr 2012 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
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