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Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

  • Danling Wang
  • , Haishan Sun
  • , Antao Chen*
  • , Sei-Hum Jang
  • , Alex K.-Y. Jen
  • , Attila Szep
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Silicon nanowires are observed to behave as chemically modulated resistors and exhibit sensitive and fast electrical responses to vapors of common nitro explosives and their degradation by-products. The nanowires were prepared with a top-down nano-fabrication process on a silicon-on-insulator wafer. The surface of the silicon nanowires was modified by plasma treatments. Both hydrogen and oxygen plasma treatments can significantly improve the responses, and oxygen plasma changes the majority carrier from p- to n-type on the surface of silicon nanowire thin films. The sensitivity is found to increase when the cross-section of the nanowires decreases. © 2012 The Royal Society of Chemistry.
Original languageEnglish
Pages (from-to)2628-2632
JournalNanoscale
Volume4
Issue number8
DOIs
Publication statusPublished - 21 Apr 2012
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

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