Chemically induced grain boundary migration in doped polycrystalline silicon films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)93-97
Journal / PublicationSolid State Communications
Volume66
Issue number1
Publication statusPublished - Apr 1988
Externally publishedYes

Abstract

Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.

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Citation Format(s)

Chemically induced grain boundary migration in doped polycrystalline silicon films. / Tu, K. N.; Tersoff, J.; Chou, T. C.; Wong, C. Y.

In: Solid State Communications, Vol. 66, No. 1, 04.1988, p. 93-97.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review