Chemically decorated boron-nitride nanoribbons

Xiao-Jun Wu; Men-Hao Wu; Xiao Cheng Zeng

doi:10.1007/s11467-009-0022-x

Chemically decorated boron-nitride nanoribbons

Xiao-Jun Wu, Men-Hao Wu, Xiao Cheng Zeng

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

67 Citations (Scopus)

Abstract

Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO₂, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications. © 2009 Higher Education Press and Springer-Verlag GmbH.

Original language	English
Pages (from-to)	367-372
Journal	Frontiers of Physics in China
Volume	4
Issue number	3
DOIs	https://doi.org/10.1007/s11467-009-0022-x
Publication status	Published - Sept 2009
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Boron-nitride nanoribbons
Chemical modification

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@article{30556e9ed9af4cd7be1e8c19d8ed7305,

title = "Chemically decorated boron-nitride nanoribbons",

abstract = "Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications. {\textcopyright} 2009 Higher Education Press and Springer-Verlag GmbH.",

keywords = "Boron-nitride nanoribbons, Chemical modification",

author = "Xiao-Jun Wu and Men-Hao Wu and Zeng, {Xiao Cheng}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2009",

month = sep,

doi = "10.1007/s11467-009-0022-x",

language = "English",

volume = "4",

pages = "367--372",

journal = "Frontiers of Physics in China",

issn = "1673-3487",

publisher = "Higher Education Press",

number = "3",

}

TY - JOUR

T1 - Chemically decorated boron-nitride nanoribbons

AU - Wu, Xiao-Jun

AU - Wu, Men-Hao

AU - Zeng, Xiao Cheng

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009/9

Y1 - 2009/9

N2 - Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications. © 2009 Higher Education Press and Springer-Verlag GmbH.

AB - Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications. © 2009 Higher Education Press and Springer-Verlag GmbH.

KW - Boron-nitride nanoribbons

KW - Chemical modification

UR - http://www.scopus.com/inward/record.url?scp=66549104240&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-66549104240&origin=recordpage

U2 - 10.1007/s11467-009-0022-x

DO - 10.1007/s11467-009-0022-x

M3 - RGC 21 - Publication in refereed journal

SN - 1673-3487

VL - 4

SP - 367

EP - 372

JO - Frontiers of Physics in China

JF - Frontiers of Physics in China

IS - 3

ER -

Chemically decorated boron-nitride nanoribbons

Abstract

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Research Keywords

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