TY - JOUR
T1 - Charging of dielectric substrate materials during plasma immersion ion implantation
AU - Tian, Xiubo
AU - Fu, Ricky K.Y.
AU - Chen, Junying
AU - Chu, Paul K.
AU - Brown, Ian G.
PY - 2002/4
Y1 - 2002/4
N2 - We have investigated the electrostatic charging effects of dielectric substrate materials during plasma immersion ion implantation. The results demonstrate that the time-dependent surface potential (negative) may be reduced in magnitude due to the charging effect of the dielectric surface, leading in turn to a reduction in the energy of the incident ions and a broadening of the implanted ion energy spectrum. The charging effect is greater during the plasma immersion bias pulse rise-time, and the electrostatic potential charging may be as large as 75% of the total applied (pulse) potential. This is due to abundant charge movement both of ions and secondary electrons, and has been confirmed by computer simulation. The plasma sheath capacitance has a small influence on the surface potential, via the bias pulse rise-time. Processing parameters, for example voltage, pulse duration, plasma density, and pulse rise-time, have a critical influence on the charging effects. Short pulse duration, high pulse frequency and low plasma density are beneficial from the viewpoint of maximizing the implantation ion energy. © 2002 Elsevier Science B.V. All rights reserved.
AB - We have investigated the electrostatic charging effects of dielectric substrate materials during plasma immersion ion implantation. The results demonstrate that the time-dependent surface potential (negative) may be reduced in magnitude due to the charging effect of the dielectric surface, leading in turn to a reduction in the energy of the incident ions and a broadening of the implanted ion energy spectrum. The charging effect is greater during the plasma immersion bias pulse rise-time, and the electrostatic potential charging may be as large as 75% of the total applied (pulse) potential. This is due to abundant charge movement both of ions and secondary electrons, and has been confirmed by computer simulation. The plasma sheath capacitance has a small influence on the surface potential, via the bias pulse rise-time. Processing parameters, for example voltage, pulse duration, plasma density, and pulse rise-time, have a critical influence on the charging effects. Short pulse duration, high pulse frequency and low plasma density are beneficial from the viewpoint of maximizing the implantation ion energy. © 2002 Elsevier Science B.V. All rights reserved.
KW - Charging
KW - Ion implantation
KW - Plasma processing and depositon
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U2 - 10.1016/S0168-583X(01)01154-5
DO - 10.1016/S0168-583X(01)01154-5
M3 - RGC 21 - Publication in refereed journal
SN - 0168-583X
VL - 187
SP - 485
EP - 491
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 4
ER -