Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films

Nian Zhan; K. L. Ng; M. C. Poon; Hei Wong; C. W. Kok

doi:10.1109/EDSSC.2003.1283552

Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films

Nian Zhan
, K. L. Ng
, M. C. Poon
, Hei Wong
, C. W. Kok

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

The reliability and integrity of HfO₂ prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	IEEE
Pages	369-372
ISBN (Print)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283552
Publication status	Published - 2003
Event	2003 IEEE Conference on Electron Devices and Solid-State Circuits - New World Renaissance Hotel, Hong Kong, China Duration: 16 Dec 2003 → 18 Dec 2003 https://ieeexplore.ieee.org/xpl/conhome/9030/proceeding

Conference

Conference	2003 IEEE Conference on Electron Devices and Solid-State Circuits
Place	Hong Kong, China
Period	16/12/03 → 18/12/03
Internet address	https://ieeexplore.ieee.org/xpl/conhome/9030/proceeding

Research Keywords

Dielectric film
Hafnium oxide
High-κ
MOS devices
Reliability
TDDB

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10.1109/EDSSC.2003.1283552

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Cite this

@inproceedings{002bd816f40e4ce2a63c3ad81cc479cd,

title = "Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films",

abstract = "The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (",

keywords = "Dielectric film, Hafnium oxide, High-κ, MOS devices, Reliability, TDDB",

author = "Nian Zhan and Ng, \{K. L.\} and Poon, \{M. C.\} and Hei Wong and Kok, \{C. W.\}",

year = "2003",

doi = "10.1109/EDSSC.2003.1283552",

language = "English",

isbn = "0780377494",

pages = "369--372",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

publisher = "IEEE",

address = "United States",

note = "2003 IEEE Conference on Electron Devices and Solid-State Circuits ; Conference date: 16-12-2003 Through 18-12-2003",

url = "https://ieeexplore.ieee.org/xpl/conhome/9030/proceeding",

}

Zhan, N, Ng, KL, Poon, MC, Wong, H & Kok, CW 2003, Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283552, IEEE, pp. 369-372, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283552

Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. / Zhan, Nian; Ng, K. L.; Poon, M. C. et al.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. IEEE, 2003. p. 369-372 1283552.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films

AU - Zhan, Nian

AU - Ng, K. L.

AU - Poon, M. C.

AU - Wong, Hei

AU - Kok, C. W.

PY - 2003

Y1 - 2003

N2 - The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (

AB - The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (

KW - Dielectric film

KW - Hafnium oxide

KW - High-κ

KW - MOS devices

KW - Reliability

KW - TDDB

UR - https://www.scopus.com/pages/publications/84946403257

UR - https://www.scopus.com/pages/publications/84946403257#tab=impact

U2 - 10.1109/EDSSC.2003.1283552

DO - 10.1109/EDSSC.2003.1283552

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780377494

SN - 9780780377493

SP - 369

EP - 372

BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - IEEE

T2 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits

Y2 - 16 December 2003 through 18 December 2003

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