Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang-Jun Baeg; Myung-Gil Kim; Charles K. Song; Xinge Yu; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.201401354

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang-Jun Baeg
, Myung-Gil Kim
, Charles K. Song
, Xinge Yu
, Antonio Facchetti^*
, Tobin J. Marks^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

37 Citations (Scopus)

Abstract

A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO₂) as a charge-trapping layer. Because of the facile reduction of Cu²⁺ to Cu¹⁺, Cu-ZrO₂ thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In₂O₃ and an indium-gallium oxide).

Original language	English
Pages (from-to)	7170-7177
Journal	Advanced Materials
Volume	26
Issue number	42
Online published	10 Sept 2014
DOIs	https://doi.org/10.1002/adma.201401354
Publication status	Published - 12 Nov 2014
Externally published	Yes

Research Keywords

amorphous oxides
data storage
dielectrics
self-assembly
semiconductors
thin films

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10.1002/adma.201401354

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title = "Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites",

abstract = "A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).",

keywords = "amorphous oxides, data storage, dielectrics, self-assembly, semiconductors, thin films",

author = "Kang-Jun Baeg and Myung-Gil Kim and Song, \{Charles K.\} and Xinge Yu and Antonio Facchetti and Marks, \{Tobin J.\}",

year = "2014",

month = nov,

day = "12",

doi = "10.1002/adma.201401354",

language = "English",

volume = "26",

pages = "7170--7177",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

AU - Baeg, Kang-Jun

AU - Kim, Myung-Gil

AU - Song, Charles K.

AU - Yu, Xinge

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2014/11/12

Y1 - 2014/11/12

N2 - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

AB - A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

KW - amorphous oxides

KW - data storage

KW - dielectrics

KW - self-assembly

KW - semiconductors

KW - thin films

UR - https://www.scopus.com/pages/publications/84941092573

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84941092573&origin=recordpage

U2 - 10.1002/adma.201401354

DO - 10.1002/adma.201401354

M3 - RGC 21 - Publication in refereed journal

SN - 0935-9648

VL - 26

SP - 7170

EP - 7177

JO - Advanced Materials

JF - Advanced Materials

IS - 42

ER -

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Abstract

Research Keywords

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