Abstract
The charge transport properties in a series of five-ring-fused thienoacenes are detailedly investigated here. With both high 3-D hole mobilities and good oxidative stability, the thiophene-benzene alternate structures in series B should be better than other two series as p-type organic semiconductors. In addition, a theoretical explanation for the difference between experimental hole mobilities in B-3 and B-3- is provided based on crystal structure prediction. The role of dynamic disorder in C-3 is also investigated here and the results indicate that dynamic disorder plays a crucial role both in the 1-D and 2-D carrier transporting process. © 2012 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 607-620 |
| Journal | Organic Electronics |
| Volume | 14 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 2013 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- Charge mobility
- Crystal structure prediction
- Dynamic disorder
- Five-ring-fused thienoacenes
- Organic semiconductors
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