Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Tzu-Chun Lu; Min-Yung Ke; Sheng-Chieh Yang; Yun-Wei Cheng; Liang-Yi Chen; Guan-Jhong Lin; Yu-Hsin Lu; Jr-Hau He; Hao-Chung Kuo; JianJang Huang

doi:10.1364/OL.35.004109

Author(s)

Tzu-Chun Lu
Min-Yung Ke
Sheng-Chieh Yang
Yun-Wei Cheng
Liang-Yi Chen
Guan-Jhong Lin
Yu-Hsin Lu
Hao-Chung Kuo
JianJang Huang

Detail(s)

Original language	English
Pages (from-to)	4109-4111
Journal / Publication	Optics Letters
Volume	35
Issue number	24
Online published	6 Dec 2010
Publication status	Published - 15 Dec 2010
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1364/OL.35.004109 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-79251470788&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(ad34720d-bf6f-4b1e-958c-beb6182128f5).html

Abstract

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Citation Format(s)

[ RIS ] [ BibTeX ]

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. / Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh et al.
In: Optics Letters, Vol. 35, No. 24, 15.12.2010, p. 4109-4111.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lu, T-C, Ke, M-Y, Yang, S-C, Cheng, Y-W, Chen, L-Y, Lin, G-J, Lu, Y-H, He, J-H, Kuo, H-C & Huang, J 2010, 'Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer', Optics Letters, vol. 35, no. 24, pp. 4109-4111. https://doi.org/10.1364/OL.35.004109

Lu, T.-C., Ke, M.-Y., Yang, S.-C., Cheng, Y.-W., Chen, L.-Y., Lin, G.-J., Lu, Y.-H., He, J.-H., Kuo, H.-C., & Huang, J. (2010). Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. Optics Letters, 35(24), 4109-4111. https://doi.org/10.1364/OL.35.004109

Lu TC, Ke MY, Yang SC, Cheng YW, Chen LY, Lin GJ et al. Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. Optics Letters. 2010 Dec 15;35(24):4109-4111. Epub 2010 Dec 6. doi: 10.1364/OL.35.004109

Lu, Tzu-Chun ; Ke, Min-Yung ; Yang, Sheng-Chieh et al. / Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. In: Optics Letters. 2010 ; Vol. 35, No. 24. pp. 4109-4111.