Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Tzu-Chun Lu
  • Min-Yung Ke
  • Sheng-Chieh Yang
  • Yun-Wei Cheng
  • Liang-Yi Chen
  • Guan-Jhong Lin
  • Yu-Hsin Lu
  • Hao-Chung Kuo
  • JianJang Huang

Detail(s)

Original languageEnglish
Pages (from-to)4109-4111
Journal / PublicationOptics Letters
Volume35
Issue number24
Online published6 Dec 2010
Publication statusPublished - 15 Dec 2010
Externally publishedYes

Abstract

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Citation Format(s)

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. / Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh et al.
In: Optics Letters, Vol. 35, No. 24, 15.12.2010, p. 4109-4111.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review