Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes

Tzu-Chun Lu; Min-Yung Ke; Sheng-Chieh Yang; Yun-Wei Cheng; Liang-Yi Chen; Guan-Jhong Lin; Yu-Hsin Lu; Jr-Hau He; Hao-Chung Kuo; JianJang Huang

Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes

Tzu-Chun Lu
, Min-Yung Ke
, Sheng-Chieh Yang
, Yun-Wei Cheng
, Liang-Yi Chen
, Guan-Jhong Lin
, Yu-Hsin Lu
, Jr-Hau He
, Hao-Chung Kuo
, JianJang Huang

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

Original language	English
Title of host publication	2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
Pages	351-354
Publication status	Published - May 2011
Externally published	Yes
Event	2011 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2011) - Palm Springs, United States Duration: 16 May 2011 → 19 May 2011

Publication series

Name	International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH

Conference

Conference	2011 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2011)
Abbreviated title	2011 CS MANTECH
Place	United States
City	Palm Springs
Period	16/05/11 → 19/05/11

Research Keywords

Low-temperature electroluminescence
UV LED
ZnO nanowire

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Lu, T.-C., Ke, M.-Y., Yang, S.-C., Cheng, Y.-W., Chen, L.-Y., Lin, G.-J., Lu, Y.-H., He, J.-H., Kuo, H.-C., & Huang, J. (2011). Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes. In 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 (pp. 351-354). (International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH).

Lu, Tzu-Chun ; Ke, Min-Yung ; Yang, Sheng-Chieh et al. / Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes. 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. 2011. pp. 351-354 (International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH).

@inproceedings{5ba6dd1dd2fa4f3cb68594eff74cb590,

title = "Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes",

abstract = "Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.",

keywords = "Low-temperature electroluminescence, UV LED, ZnO nanowire",

author = "Tzu-Chun Lu and Min-Yung Ke and Sheng-Chieh Yang and Yun-Wei Cheng and Liang-Yi Chen and Guan-Jhong Lin and Yu-Hsin Lu and Jr-Hau He and Hao-Chung Kuo and JianJang Huang",

year = "2011",

month = may,

language = "English",

isbn = "1893580172",

series = "International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH",

pages = "351--354",

booktitle = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011",

note = "2011 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2011), 2011 CS MANTECH ; Conference date: 16-05-2011 Through 19-05-2011",

}

Lu, T-C, Ke, M-Y, Yang, S-C, Cheng, Y-W, Chen, L-Y, Lin, G-J, Lu, Y-H, He, J-H, Kuo, H-C & Huang, J 2011, Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes. in 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH, pp. 351-354, 2011 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2011), Palm Springs, California, United States, 16/05/11.

Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes. / Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh et al.
2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. 2011. p. 351-354 (International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes

AU - Lu, Tzu-Chun

AU - Ke, Min-Yung

AU - Yang, Sheng-Chieh

AU - Cheng, Yun-Wei

AU - Chen, Liang-Yi

AU - Lin, Guan-Jhong

AU - Lu, Yu-Hsin

AU - He, Jr-Hau

AU - Kuo, Hao-Chung

AU - Huang, JianJang

PY - 2011/5

Y1 - 2011/5

N2 - Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

AB - Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

KW - Low-temperature electroluminescence

KW - UV LED

KW - ZnO nanowire

UR - https://www.scopus.com/pages/publications/84887390757

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84887390757&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1893580172

SN - 9781893580176

T3 - International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH

SP - 351

EP - 354

BT - 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011

T2 - 2011 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2011)

Y2 - 16 May 2011 through 19 May 2011

ER -

Lu TC, Ke MY, Yang SC, Cheng YW, Chen LY, Lin GJ et al. Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes. In 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. 2011. p. 351-354. (International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH).

Characterizations of Low-Temperature Electroluminescence from n-ZnO Nanowire/p-GaN Light Emitting Diodes

Abstract

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Research Keywords

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