Characterization of the silicon nitride-thermal oxide interface in ONO structures by ELS, XPS, ellipsometry, and numerical simulation

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

3 Scopus Citations
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Author(s)

  • V. A. Gritsenko
  • Yu N. Morokov
  • Yu N. Novikov
  • I. P. Petrenko
  • S. N. Svitasheva
  • R. Kwok
  • R. Chan

Detail(s)

Original languageEnglish
Title of host publicationProceedings of the International Conference on Microelectronics
PublisherIEEE
Pages111-114
Volume1
Publication statusPublished - 1997
Externally publishedYes

Publication series

Name
Volume1

Conference

TitleProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2)
CityNis, Yugosl
Period14 - 17 September 1997

Abstract

Using electron energy loss spectroscopy (ELS), XPS, and ellipsometry measurements, large amount of Si-Si bonds at Si3N4/thermal SiO2 interface are identified. Abnormally large value of refractive index (n = 2.1) in the Si3N4/SiO2 interface layer was obtained. The effective width of Si-rich interfacial layer is estimated to be about 5-10 angstroms. The excess silicon at Si3N4/SiO2 interface was created by replacing nitrogen with oxygen during the oxidation of Si3N4. The abnormally large electron capturing at Si3N4/SiO2 interface observed previously and the accumulation of positive charge at top interface of nitrided oxide under ionizing irradiation are explained with the existence of Si-Si bonds at Si3N4/SiO2 interface.

Citation Format(s)

Characterization of the silicon nitride-thermal oxide interface in ONO structures by ELS, XPS, ellipsometry, and numerical simulation. / Gritsenko, V. A.; Morokov, Yu N.; Novikov, Yu N.; Petrenko, I. P.; Svitasheva, S. N.; Wong, H.; Kwok, R.; Chan, R.

Proceedings of the International Conference on Microelectronics. Vol. 1 IEEE, 1997. p. 111-114.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review