@inproceedings{2584630b29e940beae1076619a88cd89,
title = "Characterization of the silicon nitride-thermal oxide interface in ONO structures by ELS, XPS, ellipsometry, and numerical simulation",
abstract = "Using electron energy loss spectroscopy (ELS), XPS, and ellipsometry measurements, large amount of Si-Si bonds at Si3N4/thermal SiO2 interface are identified. Abnormally large value of refractive index (n = 2.1) in the Si3N4/SiO2 interface layer was obtained. The effective width of Si-rich interfacial layer is estimated to be about 5-10 angstroms. The excess silicon at Si3N4/SiO2 interface was created by replacing nitrogen with oxygen during the oxidation of Si3N4. The abnormally large electron capturing at Si3N4/SiO2 interface observed previously and the accumulation of positive charge at top interface of nitrided oxide under ionizing irradiation are explained with the existence of Si-Si bonds at Si3N4/SiO2 interface.",
author = "Gritsenko, \{V. A.\} and Morokov, \{Yu N.\} and Novikov, \{Yu N.\} and Petrenko, \{I. P.\} and Svitasheva, \{S. N.\} and H. Wong and R. Kwok and R. Chan",
year = "1997",
language = "English",
volume = "1",
publisher = "IEEE",
pages = "111--114",
booktitle = "Proceedings of the International Conference on Microelectronics",
address = "United States",
note = "Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) ; Conference date: 14-09-1997 Through 17-09-1997",
}