Characterization of strained InGaAs single quantum well structures by ion beam methods
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 45-47 |
Journal / Publication | Applied Physics Letters |
Volume | 56 |
Issue number | 1 |
Publication status | Published - 1990 |
Externally published | Yes |
Link(s)
Abstract
We have investigated strained InGaAs single quantum well structures using MeV ion beam methods. The structural properties of these structures, including composition and well size, have been studied. It has been found that the composition obtained by Rutherford backscattering spectrometry and particle-induced x-ray emission techniques agrees very well with that obtained by the ion channeling method.
Citation Format(s)
Characterization of strained InGaAs single quantum well structures by ion beam methods. / Yu, Kin Man; Chan, K. T.
In: Applied Physics Letters, Vol. 56, No. 1, 1990, p. 45-47.
In: Applied Physics Letters, Vol. 56, No. 1, 1990, p. 45-47.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review