Characterization of plastically graded nanostructured material
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
Author(s)
Detail(s)
Original language | English |
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Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
Pages | 166-167 |
Publication status | Published - 2010 |
Externally published | Yes |
Conference
Title | 3rd IEEE International NanoElectronics Conference (INEC 2010) |
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Location | City University of Hong Kong |
Place | China |
City | Hong Kong |
Period | 3 - 8 January 2010 |
Link(s)
Abstract
Nanostructured materials have attracted extensive research interest in the past decades due to their exceptionally high yielding strength. Among different processing technologies, one way is to induce surface nanostructures with the consequence of gradually changed microstructures and mechanical properties from the surface to the interior layer. In order to accurately quantify the depth-dependent constitutive law, the instrumented nanoindentation associated with the FEM-based inverse algorithm was developed in this paper. The linear relationship between the recovery energy ratio and the elastic representative strain is noted, in which the slope corresponds to the specific hardening coefficient. Therefore, besides the calculation of the representative stresses, the hardening coefficient can also be explicitly calculated from the energy recovery ratio. The whole flow behavior of a linear hardening material can then be quantified by a single Berkovich indent. The computational algorithm is well verified by virtual indentations and has been successfully applied to the surface mechanical attrition treated (SMATed) stainless steel for quantify its graded mechanical properties. ©2010 IEEE.
Citation Format(s)
Characterization of plastically graded nanostructured material. / Ruan, H. H.; Chen, A. Y.; Lu, J.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 166-167 5424603.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 166-167 5424603.
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review