Characterization of Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 ferroelectric crystal with enhanced phase transition temperatures

Shujun Zhang; Jun Luo; Wesley Hackenberger; Thomas R. Shrout

doi:10.1063/1.2978333

Characterization of Pb (In_1/2 Nb_1/2) O₃ -Pb (Mg_1/3 Nb_2/3) O₃ - PbTiO₃ ferroelectric crystal with enhanced phase transition temperatures

Shujun Zhang, Jun Luo, Wesley Hackenberger, Thomas R. Shrout

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

245 Citations (Scopus)

Abstract

The full set of material constants for relaxor-based ternary single crystals Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PIN-PMN-PT) were determined and compared to binary Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PMNT) crystals. The Curie temperature for rhombohedral compositions of PIN-PMN-PT was found to be in the range of 160-200 °C with ferroelectric rhombohedral to tetragonal phase transition on the order of 120-130°C, more than 30°C higher than that found for PMNT. The piezoelectric coefficients (d33) were in the range of 1100-1500 pC/N, with electromechanical coupling factors (k33) about 89%-92% comparable to PMNT crystals. The coercive field of the ternary crystal was found to be 5.5 kV/cm, double the value of the binary counterparts. The dielectric behavior under varying dc bias exhibited a similar trend as observed in PMNT with a much broader usage temperature range. Together with its enhanced field induced phase transition level, the ternary PIN-PMN-PT crystals are promising candidates for high temperature and high drive transducer applications. © 2008 American Institute of Physics.

Original language	English
Article number	064106
Journal	Journal of Applied Physics
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.2978333
Publication status	Published - 2008
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

Funding

This work was supported by the ONR and NIH under Contract No. P41-RR11795.

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@article{179f726e0d4c4adbb510c437120ac71b,

title = "Characterization of Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 ferroelectric crystal with enhanced phase transition temperatures",

abstract = "The full set of material constants for relaxor-based ternary single crystals Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PIN-PMN-PT) were determined and compared to binary Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PMNT) crystals. The Curie temperature for rhombohedral compositions of PIN-PMN-PT was found to be in the range of 160-200 °C with ferroelectric rhombohedral to tetragonal phase transition on the order of 120-130°C, more than 30°C higher than that found for PMNT. The piezoelectric coefficients (d33) were in the range of 1100-1500 pC/N, with electromechanical coupling factors (k33) about 89%-92% comparable to PMNT crystals. The coercive field of the ternary crystal was found to be 5.5 kV/cm, double the value of the binary counterparts. The dielectric behavior under varying dc bias exhibited a similar trend as observed in PMNT with a much broader usage temperature range. Together with its enhanced field induced phase transition level, the ternary PIN-PMN-PT crystals are promising candidates for high temperature and high drive transducer applications. {\textcopyright} 2008 American Institute of Physics.",

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AU - Zhang, Shujun

AU - Luo, Jun

AU - Hackenberger, Wesley

AU - Shrout, Thomas R.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

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N2 - The full set of material constants for relaxor-based ternary single crystals Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PIN-PMN-PT) were determined and compared to binary Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PMNT) crystals. The Curie temperature for rhombohedral compositions of PIN-PMN-PT was found to be in the range of 160-200 °C with ferroelectric rhombohedral to tetragonal phase transition on the order of 120-130°C, more than 30°C higher than that found for PMNT. The piezoelectric coefficients (d33) were in the range of 1100-1500 pC/N, with electromechanical coupling factors (k33) about 89%-92% comparable to PMNT crystals. The coercive field of the ternary crystal was found to be 5.5 kV/cm, double the value of the binary counterparts. The dielectric behavior under varying dc bias exhibited a similar trend as observed in PMNT with a much broader usage temperature range. Together with its enhanced field induced phase transition level, the ternary PIN-PMN-PT crystals are promising candidates for high temperature and high drive transducer applications. © 2008 American Institute of Physics.

AB - The full set of material constants for relaxor-based ternary single crystals Pb (In1/2 Nb1/2) O3 -Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PIN-PMN-PT) were determined and compared to binary Pb (Mg1/3 Nb2/3) O3 - PbTiO3 (PMNT) crystals. The Curie temperature for rhombohedral compositions of PIN-PMN-PT was found to be in the range of 160-200 °C with ferroelectric rhombohedral to tetragonal phase transition on the order of 120-130°C, more than 30°C higher than that found for PMNT. The piezoelectric coefficients (d33) were in the range of 1100-1500 pC/N, with electromechanical coupling factors (k33) about 89%-92% comparable to PMNT crystals. The coercive field of the ternary crystal was found to be 5.5 kV/cm, double the value of the binary counterparts. The dielectric behavior under varying dc bias exhibited a similar trend as observed in PMNT with a much broader usage temperature range. Together with its enhanced field induced phase transition level, the ternary PIN-PMN-PT crystals are promising candidates for high temperature and high drive transducer applications. © 2008 American Institute of Physics.

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