CHARACTERIZATION OF n-TYPE SEMICONDUCTING INDIUM PHOSPHIDE PHOTOELECTRODES.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Arthur B. Ellis
  • Jeffrey M. Bolts
  • Mark S. Wrighton

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1603-1607
Journal / PublicationJournal of the Electrochemical Society
Volume124
Issue number10
Publication statusPublished - Oct 1977

Abstract

n-type semiconducting single crystal InP (bandgap, E//B//G, equals 1. 25 eV) has been studied as a photoanode in aqueous electrolytes. Irradiation of the InP with light of energy greater than or equal to the value of E//B//G results in the flow of anodic current. In 1. 0M NaOH solutions, the onset of photocurrent is at about minus 1. 1V vs. SCE, and the current is accompanied by anodic dissolution of the electrode. The behavior of the reductants X**2** minus (X equals S, Se, Te) was investigated, and only Te**2** minus is found to be oxidized completely efficiently at the irradiated InP. For S**2** minus we could see no oxidation to elemental S, but oxidation of Se**2** minus is found to be partially competitive with photoanodic dissolution of the electrode. The band positions of InP are determined in all electrolytes by measuring the photopotential, or from differential capacitance measurements.

Citation Format(s)

CHARACTERIZATION OF n-TYPE SEMICONDUCTING INDIUM PHOSPHIDE PHOTOELECTRODES. / Ellis, Arthur B.; Bolts, Jeffrey M.; Wrighton, Mark S.
In: Journal of the Electrochemical Society, Vol. 124, No. 10, 10.1977, p. 1603-1607.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review