Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Tsong-Ru Tsai
  • Tsung-Han Wu
  • Jung-Cheng Liao
  • Tai-Huei Wei
  • Hai-Pang Chiang
  • Jih-Shang Hwang
  • Yang-Fang Chen

Detail(s)

Original languageEnglish
Article number066101
Journal / PublicationJournal of Applied Physics
Volume105
Issue number6
Publication statusPublished - 2009
Externally publishedYes

Abstract

The femtosecond pulsed Z -scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720-790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN. © 2009 American Institute of Physics.

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Citation Format(s)

Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements. / Tsai, Tsong-Ru; Wu, Tsung-Han; Liao, Jung-Cheng et al.
In: Journal of Applied Physics, Vol. 105, No. 6, 066101, 2009.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review