Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

Shujun Zhang; Sung-Min Lee; Dong-Ho Kim; Ho-Yong Lee; Thomas R. Shrout

doi:10.1063/1.2992081

Characterization of Mn-modified Pb (Mg₁₃ Nb₂₃)O ₃ -PbZrO₃ -PbTiO₃ single crystals for high power broad bandwidth transducers

Shujun Zhang
, Sung-Min Lee
, Dong-Ho Kim
, Ho-Yong Lee
, Thomas R. Shrout

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

172 Citations (Scopus)

Abstract

The effect of MnO₂ addition on the dielectric and piezoelectric properties of 0.4Pb (Mg₁₃ Nb₂₃) O₃ -0.25PbZr O₃ -0.35PbTi O₃ single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O₃ based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k₃₃ >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers. © 2008 American Institute of Physics.

Original language	English
Article number	122908
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2992081
Publication status	Published - 2008
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by the Office of Naval Research (ONR) and National Institutes of Health (NIH) under Grant No. P41-RR11795.

Access Output

10.1063/1.2992081

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{cce715aafa4b4c8883db51b7d09b99af,

title = "Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers",

abstract = "The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in {"}hard{"} Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2\%), while maintaining ultrahigh electromechanical coupling k33 >90\%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers. {\textcopyright} 2008 American Institute of Physics.",

author = "Shujun Zhang and Sung-Min Lee and Dong-Ho Kim and Ho-Yong Lee and Shrout, \{Thomas R.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2008",

doi = "10.1063/1.2992081",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

AU - Zhang, Shujun

AU - Lee, Sung-Min

AU - Kim, Dong-Ho

AU - Lee, Ho-Yong

AU - Shrout, Thomas R.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2008

Y1 - 2008

N2 - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers. © 2008 American Institute of Physics.

AB - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/52949102517

UR - https://www.scopus.com/pages/publications/52949102517#tab=impact

U2 - 10.1063/1.2992081

DO - 10.1063/1.2992081

M3 - RGC 21 - Publication in refereed journal

C2 - 19529783

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122908

ER -