Characterization of light emitting porous polycrystalline silicon films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 415-420 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 452 |
| Publication status | Published - 1997 |
| Externally published | Yes |
Conference
| Title | 1996 MRS Fall Meeting |
|---|---|
| Place | United States |
| City | Boston |
| Period | 2 - 6 December 1996 |
Link(s)
Abstract
Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.
Citation Format(s)
Characterization of light emitting porous polycrystalline silicon films. / Poon, M. C.; Han, P. G.; Sin, J. K O et al.
In: Materials Research Society Symposium - Proceedings, Vol. 452, 1997, p. 415-420.
In: Materials Research Society Symposium - Proceedings, Vol. 452, 1997, p. 415-420.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
