Characterization of light emitting porous polycrystalline silicon films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • M. C. Poon
  • P. G. Han
  • J. K O Sin
  • H. Wong
  • P. K. Ko

Detail(s)

Original languageEnglish
Pages (from-to)415-420
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume452
Publication statusPublished - 1997
Externally publishedYes

Conference

Title1996 MRS Fall Meeting
PlaceUnited States
CityBoston
Period2 - 6 December 1996

Abstract

Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.

Citation Format(s)

Characterization of light emitting porous polycrystalline silicon films. / Poon, M. C.; Han, P. G.; Sin, J. K O; Wong, H.; Ko, P. K.

In: Materials Research Society Symposium - Proceedings, Vol. 452, 1997, p. 415-420.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal