Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

Cheng-Ying Chen; Yen-Chun Chao; Chin-An Lin; Jian-Wei Lo; Jr-Hau He

doi:10.1109/INEC.2010.5424868

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

Cheng-Ying Chen
, Yen-Chun Chao
, Chin-An Lin
, Jian-Wei Lo
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

We demonstrate a practical optoelectronic application of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

Original language	English
Title of host publication	INEC 2010
Subtitle of host publication	2010 3rd International Nanoelectronics Conference, Proceedings
Editors	Paul K Chu
Publisher	IEEE
Pages	1339-1340
ISBN (Electronic)	978-1-4244-3544-9
ISBN (Print)	978-1-4244-3543-2
DOIs	https://doi.org/10.1109/INEC.2010.5424868
Publication status	Published - Jan 2010
Externally published	Yes
Event	3rd IEEE International NanoElectronics Conference (INEC 2010) - City University of Hong Kong, Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 http://www.cityu.edu.hk/ieeeinec/

Publication series

Name	INEC - International Nanoelectronics Conference, Proceedings
Publisher	IEEE
ISSN (Print)	2159-3523
ISSN (Electronic)	2159-3531

Conference

Conference	3rd IEEE International NanoElectronics Conference (INEC 2010)
Place	China
City	Hong Kong
Period	3/01/10 → 8/01/10
Internet address	http://www.cityu.edu.hk/ieeeinec/

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access Output

10.1109/INEC.2010.5424868

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

Chen, C.-Y., Chao, Y.-C., Lin, C.-A., Lo, J.-W., & He, J.-H. (2010). Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. In P. K. Chu (Ed.), INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1339-1340). Article 5424868 (INEC - International Nanoelectronics Conference, Proceedings). IEEE. https://doi.org/10.1109/INEC.2010.5424868

@inproceedings{e85412d3a13a4f1b96b5044eb39bd943,

title = "Characterization of Er-doped ZnO nanorod arrays for broadband antireflection",

abstract = "We demonstrate a practical optoelectronic application of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.",

author = "Cheng-Ying Chen and Yen-Chun Chao and Chin-An Lin and Jian-Wei Lo and Jr-Hau He",

year = "2010",

month = jan,

doi = "10.1109/INEC.2010.5424868",

language = "English",

isbn = "978-1-4244-3543-2",

series = "INEC - International Nanoelectronics Conference, Proceedings",

publisher = "IEEE",

pages = "1339--1340",

editor = "Chu, \{Paul K\}",

booktitle = "INEC 2010",

address = "United States",

note = "3rd IEEE International NanoElectronics Conference (INEC 2010) ; Conference date: 03-01-2010 Through 08-01-2010",

url = "http://www.cityu.edu.hk/ieeeinec/",

}

Chen, C-Y, Chao, Y-C, Lin, C-A, Lo, J-W & He, J-H 2010, Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. in PK Chu (ed.), INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings., 5424868, INEC - International Nanoelectronics Conference, Proceedings, IEEE, pp. 1339-1340, 3rd IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424868

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. / Chen, Cheng-Ying; Chao, Yen-Chun; Lin, Chin-An et al.
INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings. ed. / Paul K Chu. IEEE, 2010. p. 1339-1340 5424868 (INEC - International Nanoelectronics Conference, Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

AU - Chen, Cheng-Ying

AU - Chao, Yen-Chun

AU - Lin, Chin-An

AU - Lo, Jian-Wei

AU - He, Jr-Hau

PY - 2010/1

Y1 - 2010/1

N2 - We demonstrate a practical optoelectronic application of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

AB - We demonstrate a practical optoelectronic application of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

UR - https://www.scopus.com/pages/publications/77951662101

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77951662101&origin=recordpage

U2 - 10.1109/INEC.2010.5424868

DO - 10.1109/INEC.2010.5424868

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4244-3543-2

T3 - INEC - International Nanoelectronics Conference, Proceedings

SP - 1339

EP - 1340

BT - INEC 2010

A2 - Chu, Paul K

PB - IEEE

T2 - 3rd IEEE International NanoElectronics Conference (INEC 2010)

Y2 - 3 January 2010 through 8 January 2010

ER -

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

Abstract

Publication series

Conference

UN SDGs

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this