Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs

Yonghao Jia; Yuehang Xu; Kai Lu; Zhang Wen; An-Dong Huang; Yong-Xin Guo

doi:10.1109/TED.2018.2849501

Author(s)

Yonghao Jia
Yuehang Xu
Kai Lu
Zhang Wen
An-Dong Huang

Detail(s)

Original language	English
Article number	8401849
Pages (from-to)	3169-3175
Journal / Publication	IEEE Transactions on Electron Devices
Volume	65
Issue number	8
Publication status	Published - 1 Aug 2018
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/TED.2018.2849501 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85049310048&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(97d21c6d-4905-4129-b432-f9aca0b72595).html

Abstract

In this paper, the buffer-related current collapse (CC) in AlGaN/GaN HEMTs is investigated by using pulsed I-V measurements and 2-D drift-diffusion simulations. The simulation results indicate that the negative potential (NP), appearing in the Fe-doped buffer under the gate, is found to account for the CC. The NP will induce threshold voltage shifts, in which an inflection point (IP) of the threshold voltage is found. It could be revealed in pulsed I-V characteristics which are significant to depict trapping effect when building a compact large-signal model. The formation mechanism of the IP is detailed. In the end, a simple threshold voltage model is proposed for verification. © 1963-2012 IEEE.

Research Area(s)

AlGaN/GaN HEMTs, buffer-related current collapse (CC), RF devices modeling, threshold voltage shifts

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

[ RIS ] [ BibTeX ]

Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs. / Jia, Yonghao; Xu, Yuehang; Lu, Kai et al.
In: IEEE Transactions on Electron Devices, Vol. 65, No. 8, 8401849, 01.08.2018, p. 3169-3175.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Jia, Y, Xu, Y, Lu, K, Wen, Z, Huang, A-D & Guo, Y-X 2018, 'Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs', IEEE Transactions on Electron Devices, vol. 65, no. 8, 8401849, pp. 3169-3175. https://doi.org/10.1109/TED.2018.2849501

Jia, Y., Xu, Y., Lu, K., Wen, Z., Huang, A.-D., & Guo, Y.-X. (2018). Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 65(8), 3169-3175. Article 8401849. https://doi.org/10.1109/TED.2018.2849501

Jia Y, Xu Y, Lu K, Wen Z, Huang AD, Guo YX. Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 2018 Aug 1;65(8):3169-3175. 8401849. doi: 10.1109/TED.2018.2849501

Jia, Yonghao ; Xu, Yuehang ; Lu, Kai et al. / Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices. 2018 ; Vol. 65, No. 8. pp. 3169-3175.