Abstract
In this paper, the buffer-related current collapse (CC) in AlGaN/GaN HEMTs is investigated by using pulsed I-V measurements and 2-D drift-diffusion simulations. The simulation results indicate that the negative potential (NP), appearing in the Fe-doped buffer under the gate, is found to account for the CC. The NP will induce threshold voltage shifts, in which an inflection point (IP) of the threshold voltage is found. It could be revealed in pulsed I-V characteristics which are significant to depict trapping effect when building a compact large-signal model. The formation mechanism of the IP is detailed. In the end, a simple threshold voltage model is proposed for verification. © 1963-2012 IEEE.
| Original language | English |
|---|---|
| Article number | 8401849 |
| Pages (from-to) | 3169-3175 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 65 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Aug 2018 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- AlGaN/GaN HEMTs
- buffer-related current collapse (CC)
- RF devices modeling
- threshold voltage shifts