Characterization of bending in single crystal Si beams and resonators

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journal

3 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1336-1340
Journal / PublicationJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Volume17
Issue number4
Publication statusPublished - Jul 1999
Externally publishedYes

Abstract

Optical interferometry has been applied to determine the displacement of p++ Si beams. Clamped-clamped Si beams and cantilevered beams were fabricated with short and long B diffusion processes and characterized. Measurements of beam bending for released Si structures with length varying from 50 to 1000 μm, width varying from 5 to 15 μm, and thickness varying from 6 to 37 μm were obtained. By taking advantage of an etch-diffusion process, thicker beams can be fabricated which have less bending due to stress gradients. A 6.0-μm-thick cantilevered beam had a deflection of 11.2 μμm due to stress gradients, while a 36.7-μm-thick beam had a deflection of only 0.3 μm. Beams fabricated using a dissolved wafer process with a 12 h B diffusion were found to bend the same amount as those fabricated with a 4 h diffusion. This indicates that bending in doped Si beams not only depends on the gradients in the B concentrations, it could also be related to the distribution of dislocations. Using the deep-etch shallow-diffusion process, resonating elements that are 20 μm long, 4 μμm wide, and 28 μm thick were found to be perfectly flat without any bending.

Citation Format(s)

Characterization of bending in single crystal Si beams and resonators. / Weigold, J. W.; Juan, W. H.; Pang, S. W. et al.
In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 17, No. 4, 07.1999, p. 1336-1340 .

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journal