Characterization and model validation of a micromechanical resonant magnetic field sensor

W. Zhang; J. E Y Lee

doi:10.1109/Transducers.2013.6627153

Characterization and model validation of a micromechanical resonant magnetic field sensor

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

This paper presents an analysis and model verification of a silicon-on-insulator (SOI) micromechanical resonant magnetic field sensor. The sensing mechanism is based on the detection of resonant frequency shift due to a Lorentz force that is generated by the presence of a magnetic field. We analyze the effect of scaling on sensitivity, showing that sensitivity improves when the device is thinner. The measured sensitivity is 677ppm/T with an associated high quality factor of 37000 when the thickness of the device is 10μm. Calibration slopes of the sensitivity measured from devices of different thicknesses all agree well with our analytical model predictions. Based on the model, we envisage that sensitivity could be further improved to about 1.7%/T within fabrication technology limitations. © 2013 IEEE.

Original language	English
Title of host publication	2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Pages	1859-1862
DOIs	https://doi.org/10.1109/Transducers.2013.6627153
Publication status	Published - 2013
Event	17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS 2013) - Barcelona, Spain Duration: 16 Jun 2013 → 20 Jun 2013

Conference

Conference	17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS 2013)
Abbreviated title	Transducers’13 and Eurosensors XVII
Place	Spain
City	Barcelona
Period	16/06/13 → 20/06/13

Research Keywords

magnetic field sensor
MEMS resonator
sensitivity calibration

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@inproceedings{20e80fe778244d6cb60205a6562f7495,

title = "Characterization and model validation of a micromechanical resonant magnetic field sensor",

abstract = "This paper presents an analysis and model verification of a silicon-on-insulator (SOI) micromechanical resonant magnetic field sensor. The sensing mechanism is based on the detection of resonant frequency shift due to a Lorentz force that is generated by the presence of a magnetic field. We analyze the effect of scaling on sensitivity, showing that sensitivity improves when the device is thinner. The measured sensitivity is 677ppm/T with an associated high quality factor of 37000 when the thickness of the device is 10μm. Calibration slopes of the sensitivity measured from devices of different thicknesses all agree well with our analytical model predictions. Based on the model, we envisage that sensitivity could be further improved to about 1.7%/T within fabrication technology limitations. {\textcopyright} 2013 IEEE.",

keywords = "magnetic field sensor, MEMS resonator, sensitivity calibration",

author = "W. Zhang and Lee, {J. E Y}",

year = "2013",

doi = "10.1109/Transducers.2013.6627153",

language = "English",

isbn = "9781467359818",

pages = "1859--1862",

booktitle = "2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013",

note = "17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS 2013), Transducers{\textquoteright}13 and Eurosensors XVII ; Conference date: 16-06-2013 Through 20-06-2013",

}

Zhang, W & Lee, JEY 2013, Characterization and model validation of a micromechanical resonant magnetic field sensor. in 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013., 6627153, pp. 1859-1862, 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS 2013), Barcelona, Spain, 16/06/13. https://doi.org/10.1109/Transducers.2013.6627153

Characterization and model validation of a micromechanical resonant magnetic field sensor. / Zhang, W.; Lee, J. E Y.
2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013. 2013. p. 1859-1862 6627153.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Characterization and model validation of a micromechanical resonant magnetic field sensor

AU - Zhang, W.

AU - Lee, J. E Y

PY - 2013

Y1 - 2013

N2 - This paper presents an analysis and model verification of a silicon-on-insulator (SOI) micromechanical resonant magnetic field sensor. The sensing mechanism is based on the detection of resonant frequency shift due to a Lorentz force that is generated by the presence of a magnetic field. We analyze the effect of scaling on sensitivity, showing that sensitivity improves when the device is thinner. The measured sensitivity is 677ppm/T with an associated high quality factor of 37000 when the thickness of the device is 10μm. Calibration slopes of the sensitivity measured from devices of different thicknesses all agree well with our analytical model predictions. Based on the model, we envisage that sensitivity could be further improved to about 1.7%/T within fabrication technology limitations. © 2013 IEEE.

AB - This paper presents an analysis and model verification of a silicon-on-insulator (SOI) micromechanical resonant magnetic field sensor. The sensing mechanism is based on the detection of resonant frequency shift due to a Lorentz force that is generated by the presence of a magnetic field. We analyze the effect of scaling on sensitivity, showing that sensitivity improves when the device is thinner. The measured sensitivity is 677ppm/T with an associated high quality factor of 37000 when the thickness of the device is 10μm. Calibration slopes of the sensitivity measured from devices of different thicknesses all agree well with our analytical model predictions. Based on the model, we envisage that sensitivity could be further improved to about 1.7%/T within fabrication technology limitations. © 2013 IEEE.

KW - magnetic field sensor

KW - MEMS resonator

KW - sensitivity calibration

UR - http://www.scopus.com/inward/record.url?scp=84891702087&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84891702087&origin=recordpage

U2 - 10.1109/Transducers.2013.6627153

DO - 10.1109/Transducers.2013.6627153

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781467359818

SP - 1859

EP - 1862

BT - 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013

T2 - 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS 2013)

Y2 - 16 June 2013 through 20 June 2013

ER -

Characterization and model validation of a micromechanical resonant magnetic field sensor

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