Characterization and manipulation of exposed Ge nanocrystals
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
Author(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 391-396 |
Journal / Publication | Materials Research Society Symposium Proceedings |
Volume | 818 |
Publication status | Published - 2004 |
Externally published | Yes |
Conference
Title | Nanoparticles and Nanowire Building Blocks - Synthesis, Processing, Characterization and Theory |
---|---|
Place | United States |
City | San Francisco, CA |
Period | 13 - 16 April 2004 |
Link(s)
Abstract
Isotopically pure 70Ge and 74Ge nanocrystals embedded in SiO 2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.
Citation Format(s)
Characterization and manipulation of exposed Ge nanocrystals. / Sharp, I. D.; Xu, Q.; Liao, C. Y. et al.
In: Materials Research Society Symposium Proceedings, Vol. 818, 2004, p. 391-396.
In: Materials Research Society Symposium Proceedings, Vol. 818, 2004, p. 391-396.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal