Characterization and manipulation of exposed Ge nanocrystals

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

1 Scopus Citations
View graph of relations

Author(s)

  • I. D. Sharp
  • Q. Xu
  • C. Y. Liao
  • D. O. Yi
  • J. W. Ager III
  • J. W. Beeman
  • D. N. Zakharov
  • Z. Liliental-Weber
  • D. C. Chrzan
  • E. E. Haller

Detail(s)

Original languageEnglish
Pages (from-to)391-396
Journal / PublicationMaterials Research Society Symposium Proceedings
Volume818
Publication statusPublished - 2004
Externally publishedYes

Conference

TitleNanoparticles and Nanowire Building Blocks - Synthesis, Processing, Characterization and Theory
PlaceUnited States
CitySan Francisco, CA
Period13 - 16 April 2004

Abstract

Isotopically pure 70Ge and 74Ge nanocrystals embedded in SiO 2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.

Citation Format(s)

Characterization and manipulation of exposed Ge nanocrystals. / Sharp, I. D.; Xu, Q.; Liao, C. Y. et al.
In: Materials Research Society Symposium Proceedings, Vol. 818, 2004, p. 391-396.

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal