Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

460 Scopus Citations
View graph of relations


Related Research Unit(s)


Original languageEnglish
Article number6192346
Pages (from-to)573-590
Journal / PublicationIEEE Transactions on Power Electronics
Issue number1
Online published30 Apr 2012
Publication statusPublished - Jan 2013


This paper presents a comprehensive study on the influences of parasitic elements on the MOSFET switching performance. A circuit-level analytical model that takes MOSFET parasitic capacitances and inductances, circuit stray inductances, and reverse current of the freewheeling diode into consideration is given to evaluate the MOSFET switching characteristics. The equations derived for emulating MOSFET switching transients are assessed graphically, which, compared to results obtained merely from simulation or parametric study, can offer better insight into where the changes in switching performance lie when the parasitic elements are varied. The analysis has been successfully substantiated by the experimental results of a 400 V, 6 A test bench. A discussion on the physical meanings behind these parasitic effect phenomena is included. Knowledge about the effects of parasitic elements on the switching behavior serves as an important basis for the design guidelines of fast switching power converters. © 1986-2012 IEEE.

Research Area(s)

  • MOSFET, parasitic elements, switching characteristics

Citation Format(s)