Characteristics of La2O3 gate dielectric film with Al implantation using plasma immersion ion implantation

Banani Sen; H. Wong; P. K. Chu; K. Kakushima; H. Iwai

doi:10.1109/EDSSC.2008.4760674

Characteristics of La₂O₃ gate dielectric film with Al implantation using plasma immersion ion implantation

Banani Sen^*
, H. Wong
, P. K. Chu
, K. Kakushima
, H. Iwai

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

In this work, the effects of aluminum implantation on thin La ₂O₃ films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (∼ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction in the leakage current (by four orders of magnitude) and the flatband voltage shift are indications of significant removal of the bulk traps from the oxide. The steep transition from the depletion region to the accumulation region in the CV characteristics as well as the XPS results reveal the stoichiometric improvement of the interfacial layer with a reduction in the interface state density. However, the annealing conditions need to be optimized in order to have maximum reduction in oxide traps and leakage current in the Al-PIII La₂O ₃ film. © 2008 IEEE.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
ISBN (Electronic)	9781424425402
DOIs	https://doi.org/10.1109/EDSSC.2008.4760674
Publication status	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 8 Dec 2008 → 10 Dec 2008

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Place	China
City	Hong Kong
Period	8/12/08 → 10/12/08

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Cite this

@inproceedings{0d8167d50b784ec792d68ce6c2977f94,

title = "Characteristics of La2O3 gate dielectric film with Al implantation using plasma immersion ion implantation",

abstract = "In this work, the effects of aluminum implantation on thin La 2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (∼ 6\% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction in the leakage current (by four orders of magnitude) and the flatband voltage shift are indications of significant removal of the bulk traps from the oxide. The steep transition from the depletion region to the accumulation region in the CV characteristics as well as the XPS results reveal the stoichiometric improvement of the interfacial layer with a reduction in the interface state density. However, the annealing conditions need to be optimized in order to have maximum reduction in oxide traps and leakage current in the Al-PIII La2O 3 film. {\textcopyright} 2008 IEEE.",

author = "Banani Sen and H. Wong and Chu, \{P. K.\} and K. Kakushima and H. Iwai",

year = "2008",

doi = "10.1109/EDSSC.2008.4760674",

language = "English",

isbn = "9781424425396",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Sen, B, Wong, H , Chu, PK, Kakushima, K & Iwai, H 2008, Characteristics of La₂O₃ gate dielectric film with Al implantation using plasma immersion ion implantation. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760674, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 8/12/08. https://doi.org/10.1109/EDSSC.2008.4760674

Characteristics of La₂O₃ gate dielectric film with Al implantation using plasma immersion ion implantation. / Sen, Banani; Wong, H.; Chu, P. K. et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760674.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Characteristics of La2O3 gate dielectric film with Al implantation using plasma immersion ion implantation

AU - Sen, Banani

AU - Wong, H.

AU - Chu, P. K.

AU - Kakushima, K.

AU - Iwai, H.

PY - 2008

Y1 - 2008

N2 - In this work, the effects of aluminum implantation on thin La 2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (∼ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction in the leakage current (by four orders of magnitude) and the flatband voltage shift are indications of significant removal of the bulk traps from the oxide. The steep transition from the depletion region to the accumulation region in the CV characteristics as well as the XPS results reveal the stoichiometric improvement of the interfacial layer with a reduction in the interface state density. However, the annealing conditions need to be optimized in order to have maximum reduction in oxide traps and leakage current in the Al-PIII La2O 3 film. © 2008 IEEE.

AB - In this work, the effects of aluminum implantation on thin La 2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (∼ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction in the leakage current (by four orders of magnitude) and the flatband voltage shift are indications of significant removal of the bulk traps from the oxide. The steep transition from the depletion region to the accumulation region in the CV characteristics as well as the XPS results reveal the stoichiometric improvement of the interfacial layer with a reduction in the interface state density. However, the annealing conditions need to be optimized in order to have maximum reduction in oxide traps and leakage current in the Al-PIII La2O 3 film. © 2008 IEEE.

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U2 - 10.1109/EDSSC.2008.4760674

DO - 10.1109/EDSSC.2008.4760674

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424425396

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

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