Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Wei Dong Zhou; Jayshri Sabarinathan; Pallab Bhattarcharya; Boaz Kochman; Erik W. Berg; Pei-Chen Yu; Stella W. Pang

doi:10.1109/3.945320

Author(s)

Wei Dong Zhou
Jayshri Sabarinathan
Pallab Bhattarcharya
Boaz Kochman
Erik W. Berg
Pei-Chen Yu

Detail(s)

Original language	English
Pages (from-to)	1153-1160
Journal / Publication	IEEE Journal of Quantum Electronics
Volume	37
Issue number	9
Online published	Sep 2001
Publication status	Published - Sep 2001
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/3.945320 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0035444727&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(9203e178-4593-40ab-9c92-c42b6ebc2f0c).html

Abstract

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In_0.15Ga_0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

Research Area(s)

Defect mode, Microcavity, Photonic bandgap, Surface emitting

Citation Format(s)

[ RIS ] [ BibTeX ]

Characteristics of a photonic bandgap single defect microcavity electroluminescent device. / Zhou, Wei Dong; Sabarinathan, Jayshri; Bhattarcharya, Pallab et al.

In: IEEE Journal of Quantum Electronics, Vol. 37, No. 9, 09.2001, p. 1153-1160.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Zhou, WD, Sabarinathan, J, Bhattarcharya, P, Kochman, B, Berg, EW, Yu, P-C & Pang, SW 2001, 'Characteristics of a photonic bandgap single defect microcavity electroluminescent device', IEEE Journal of Quantum Electronics, vol. 37, no. 9, pp. 1153-1160. https://doi.org/10.1109/3.945320

Zhou, W. D., Sabarinathan, J., Bhattarcharya, P., Kochman, B., Berg, E. W., Yu, P-C., & Pang, S. W. (2001). Characteristics of a photonic bandgap single defect microcavity electroluminescent device. IEEE Journal of Quantum Electronics, 37(9), 1153-1160. https://doi.org/10.1109/3.945320

Zhou WD, Sabarinathan J, Bhattarcharya P, Kochman B, Berg EW, Yu P-C et al. Characteristics of a photonic bandgap single defect microcavity electroluminescent device. IEEE Journal of Quantum Electronics. 2001 Sep;37(9):1153-1160. Epub 2001 Sep. doi: 10.1109/3.945320

Zhou, Wei Dong ; Sabarinathan, Jayshri ; Bhattarcharya, Pallab et al. / Characteristics of a photonic bandgap single defect microcavity electroluminescent device. In: IEEE Journal of Quantum Electronics. 2001 ; Vol. 37, No. 9. pp. 1153-1160.