Characteristics of a photonic bandgap single defect microcavity electroluminescent device
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 1153-1160 |
Journal / Publication | IEEE Journal of Quantum Electronics |
Volume | 37 |
Issue number | 9 |
Online published | Sep 2001 |
Publication status | Published - Sep 2001 |
Externally published | Yes |
Link(s)
Abstract
A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.
Research Area(s)
- Defect mode, Microcavity, Photonic bandgap, Surface emitting
Citation Format(s)
Characteristics of a photonic bandgap single defect microcavity electroluminescent device. / Zhou, Wei Dong; Sabarinathan, Jayshri; Bhattarcharya, Pallab et al.
In: IEEE Journal of Quantum Electronics, Vol. 37, No. 9, 09.2001, p. 1153-1160.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review