Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Wei Dong Zhou; Jayshri Sabarinathan; Pallab Bhattarcharya; Boaz Kochman; Erik W. Berg; Pei-Chen Yu; Stella W. Pang

doi:10.1109/3.945320

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Wei Dong Zhou
, Jayshri Sabarinathan
, Pallab Bhattarcharya
, Boaz Kochman
, Erik W. Berg
, Pei-Chen Yu
, Stella W. Pang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

67 Citations (Scopus)

Abstract

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In_0.15Ga_0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

Original language	English
Pages (from-to)	1153-1160
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	9
Online published	Sept 2001
DOIs	https://doi.org/10.1109/3.945320
Publication status	Published - Sept 2001
Externally published	Yes

Research Keywords

Defect mode
Microcavity
Photonic bandgap
Surface emitting

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title = "Characteristics of a photonic bandgap single defect microcavity electroluminescent device",

abstract = "A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- {\AA} compressively strained In0.15Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.",

keywords = "Defect mode, Microcavity, Photonic bandgap, Surface emitting",

author = "Zhou, \{Wei Dong\} and Jayshri Sabarinathan and Pallab Bhattarcharya and Boaz Kochman and Berg, \{Erik W.\} and Pei-Chen Yu and Pang, \{Stella W.\}",

year = "2001",

month = sep,

doi = "10.1109/3.945320",

language = "English",

volume = "37",

pages = "1153--1160",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE",

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TY - JOUR

T1 - Characteristics of a photonic bandgap single defect microcavity electroluminescent device

AU - Zhou, Wei Dong

AU - Sabarinathan, Jayshri

AU - Bhattarcharya, Pallab

AU - Kochman, Boaz

AU - Berg, Erik W.

AU - Yu, Pei-Chen

AU - Pang, Stella W.

PY - 2001/9

Y1 - 2001/9

N2 - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

AB - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

KW - Defect mode

KW - Microcavity

KW - Photonic bandgap

KW - Surface emitting

UR - https://www.scopus.com/pages/publications/0035444727

UR - https://www.scopus.com/pages/publications/0035444727#tab=impact

U2 - 10.1109/3.945320

DO - 10.1109/3.945320

M3 - RGC 21 - Publication in refereed journal

SN - 0018-9197

VL - 37

SP - 1153

EP - 1160

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Abstract

Research Keywords

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