Characterisation of high-isolation RF capacitive microswitches

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journalNot applicable

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)440-451
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume4586
Publication statusPublished - 2001
Externally publishedYes

Conference

TitleWireless and Mobile Communications
PlaceChina
CityBeijing
Period12 - 15 November 2001

Abstract

With the recent growth of microelectromechanical systems (MEMS), RF capacitive microswitches are becoming popular. As such there is a need to accurately characterise the performance of the RF capacitive microswitches, To realise this goal, the paper proposes both electrical and static mechanical models to precisely extract the performance parameters of the RF capacitive microswitches. The electrical model proposed in this paper provides a means to represent the RF capacitive microswitches for use to determine the resistance, capacitance, and inductance. The static mechanical model predicts the effective stiffness constant and the pull-in voltage. Deformation of the bridge and its contact behaviour with the dielectric layer are also precisely analysed using Finite Element Method. Finally this paper discusses the fabrication of the RF capacitive microswitches.

Research Area(s)

  • Characterisation, MEMS, Microswitch, RF MEMS