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Carrier concentration dependencies of magnetization & transport in Ga1-xMnxAs1-yTey

M. A. Scarpulla, K. M. Yu, W. Walukiewicz, O. D. Dubon

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

We have investigated the transport and magnetization characteristics of Ga 1-xMn xAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization. © 2005 American Institute of Physics.
Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors
EditorsJosé Menéndez, Chris G. Van de Walle
PublisherAmerican Institute of Physics
Pages1367-1368
ISBN (Print)0735402574, 9780735402577
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
Event27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Number1
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference27th International Conference on the Physics of Semiconductors (ICPS 27)
PlaceUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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