Carbon nanotube seeded silicon crystal growth

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number14307
Journal / PublicationJournal of Applied Physics
Volume110
Issue number1
Publication statusPublished - 1 Jul 2011

Abstract

Crystal growth of liquid silicon on the heterogeneous surfaces of carbon nanotubes (CNTs) is simulated. Silicon atoms are concentrated to form perfect coaxial cylindrical configurations around CNT cores. The heredity effect makes silicon imprint cylindrical shapes of CNTs during the solidification. The CNTs have a great influence on the stacking sequence of silicon atoms. Growth competition between CNT cores is clearly observed, which results in defects at the shared interface. The internal potential field around CNTs is responsible for growth competition and the heredity effect. © 2011 American Institute of Physics.

Citation Format(s)

Carbon nanotube seeded silicon crystal growth. / Li, Y. F.; Li, H.; Sun, F. W.; Zhang, X. Q.; Liew, K. M.

In: Journal of Applied Physics, Vol. 110, No. 1, 14307, 01.07.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review