Carbon nanotube seeded silicon crystal growth
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
|Journal / Publication||Journal of Applied Physics|
|Publication status||Published - 1 Jul 2011|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-79960514556&origin=recordpage|
Crystal growth of liquid silicon on the heterogeneous surfaces of carbon nanotubes (CNTs) is simulated. Silicon atoms are concentrated to form perfect coaxial cylindrical configurations around CNT cores. The heredity effect makes silicon imprint cylindrical shapes of CNTs during the solidification. The CNTs have a great influence on the stacking sequence of silicon atoms. Growth competition between CNT cores is clearly observed, which results in defects at the shared interface. The internal potential field around CNTs is responsible for growth competition and the heredity effect. © 2011 American Institute of Physics.