Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Zai-Xing Yang
  • Ning Han
  • Fengyun Wang
  • Ho-Yuen Cheung
  • Xiaoling Shi
  • Takfu Hung
  • Min Hyung Lee

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)9671-9676
Journal / PublicationNanoscale
Volume5
Issue number20
Online published12 Aug 2013
Publication statusPublished - 21 Oct 2013

Abstract

Due to the unique physical properties, small bandgap III-V semiconductor nanowires such as InAs and InSb have been extensively studied for the next-generation high-speed and high-frequency electronics. However, further CMOS applications are still limited by the lack of efficient p-doping in these nanowire materials for high-performance p-channel devices. Here, we demonstrate a simple and effective in situ doping technique in the solid-source chemical vapor deposition of InSb nanowires on amorphous substrates employing carbon dopants. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the versatility of this doping scheme is illustrated by the fabrication of high-performance p-channel nanowire field-effect-transistors. High electrically active carbon concentrations of ∼7.5 × 10 17 cm-3 and field-effect hole mobility of ∼140 cm 2 V-1 s-1 are achieved which are essential for compensating the electron-rich surface layers of InSb to enable heavily p-doped and high-performance device structures. All these further indicate the technological potency of this in situ doping technique as well as p-InSb nanowires for the fabrication of future CMOS electronics. © The Royal Society of Chemistry 2013.

Citation Format(s)

Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors. / Yang, Zai-Xing; Han, Ning; Wang, Fengyun; Cheung, Ho-Yuen; Shi, Xiaoling; Yip, Senpo; Hung, Takfu; Lee, Min Hyung; Wong, Chun-Yuen; Ho, Johnny C.

In: Nanoscale, Vol. 5, No. 20, 21.10.2013, p. 9671-9676.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review