Capacity-independent address mapping for flash storage devices with explosively growing capacity

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number7100860
Pages (from-to)448-465
Journal / PublicationIEEE Transactions on Computers
Volume65
Issue number2
Online published30 Apr 2015
Publication statusPublished - Feb 2016
Externally publishedYes

Abstract

Address mapping for flash storage devices has been a challenging design issue for controllers because of rapidly growing device capacity. In contrast with existing mapping methods, this study proposes a capacity-independent address mapping method to decouple the required on-device RAM space from the capacity of a flash storage device. Especially, the required RAM size of the proposed method depends only on the user accessed data set, which is also referred to as the working set, while the page-level performance can be nearly achieved. In addition, a simple but practical wear-leveling design is proposed with the capability in lifetime estimation of flash storage devices. Experiments of the proposed scheme obtained encouraging results.

Research Area(s)

  • address mapping, Flash memory, flash storage device, garbage collection, March operation, MLC, solid-state drive, storage systems, working set

Citation Format(s)

Capacity-independent address mapping for flash storage devices with explosively growing capacity. / Yang, Ming-Chang; Chang, Yuan-Hao; Kuo, Tei-Wei; Huang, Po-Chun.

In: IEEE Transactions on Computers, Vol. 65, No. 2, 7100860, 02.2016, p. 448-465.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review