Capacity-independent address mapping for flash storage devices with explosively growing capacity
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 7100860 |
Pages (from-to) | 448-465 |
Journal / Publication | IEEE Transactions on Computers |
Volume | 65 |
Issue number | 2 |
Online published | 30 Apr 2015 |
Publication status | Published - Feb 2016 |
Externally published | Yes |
Link(s)
Abstract
Address mapping for flash storage devices has been a challenging design issue for controllers because of rapidly growing device capacity. In contrast with existing mapping methods, this study proposes a capacity-independent address mapping method to decouple the required on-device RAM space from the capacity of a flash storage device. Especially, the required RAM size of the proposed method depends only on the user accessed data set, which is also referred to as the working set, while the page-level performance can be nearly achieved. In addition, a simple but practical wear-leveling design is proposed with the capability in lifetime estimation of flash storage devices. Experiments of the proposed scheme obtained encouraging results.
Research Area(s)
- address mapping, Flash memory, flash storage device, garbage collection, March operation, MLC, solid-state drive, storage systems, working set
Citation Format(s)
Capacity-independent address mapping for flash storage devices with explosively growing capacity. / Yang, Ming-Chang; Chang, Yuan-Hao; Kuo, Tei-Wei et al.
In: IEEE Transactions on Computers, Vol. 65, No. 2, 7100860, 02.2016, p. 448-465.
In: IEEE Transactions on Computers, Vol. 65, No. 2, 7100860, 02.2016, p. 448-465.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review