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Capacitance of high-voltage coaxial cable in plasma immersion ion implantation

  • X.B. Tian
  • , L.P. Wang
  • , D.T.K. Kwok
  • , B. Y. Tang
  • , P.K. Chu*
  • *Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    Plasma immersion ion implantation (Plll) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored . In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.
    Original languageEnglish
    Pages (from-to)41-42
    JournalJournal of Materials Science and Technology
    Volume17
    Issue number1
    Publication statusPublished - Jan 2001

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