Burn-in effect on yield
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › Meeting abstract › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 236 |
| Journal / Publication | IEEE Transactions on Electronics Packaging Manufacturing |
| Volume | 23 |
| Issue number | 4 |
| Publication status | Published - Oct 2000 |
| Externally published | Yes |
Link(s)
| DOI | DOI |
|---|---|
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(3236fdc7-1b2b-4bcb-86e2-59ad52d6a520).html |
Abstract
By removing infant mortalities, burn-in of semiconductor devices improves reliability. However, burn-in may affect the yield of semiconductor devices since defects grow during burn-in and some of them end up with yield loss. The amount of yield loss depends upon burn-in environments. Another burn-in effect is the yield gain. Since yield is a function of defect density, if some defects are detected and removed during burn-in, the yield of the post-burn-in processes can be expected to increase. The amount of yield gain depends on the number of defects removed during burn-in. In this paper, we present yield loss and gain expressions and relate them with the reliability projection of semiconductor devices in order to determine burn-in time. © 2000 IEEE.
Citation Format(s)
Burn-in effect on yield. / Kim, Taeho; Kuo, Way; Chien, Wei-Ting Kary.
In: IEEE Transactions on Electronics Packaging Manufacturing, Vol. 23, No. 4, 10.2000, p. 236.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › Meeting abstract › peer-review
