Bulk-quantity Si nanowires synthesized by SiO sublimation

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Y. F. Zhang
  • Y. H. Tang
  • C. Lam
  • N. Wang
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)115-118
Journal / PublicationJournal of Crystal Growth
Volume212
Issue number1
Publication statusPublished - 2000

Abstract

High-purity Si nanowires in bulk-quantity have been grown from SiO in a high-temperature tube furnace. Thermal sublimation of SiO powders produced SiO vapor, which was transported and deposited on the inner wall of the tube at approximately 930 °C. We proposed that the SiO deposit underwent a disproportionation reaction to form nanowires containing Si and SiO2. Each wire consisted of a single crystalline Si core and an oxide sheath, 6-28 nm in diameter and up to 1 mm in length. This work gave strong support to the recently proposed oxide-assisted growth mechanism. The yield of Si nanowires increased with sublimation temperature and pressure. Under suitable deposition conditions, Si nanowire growth rate of more than 10 mg/h could be routinely obtained.

Citation Format(s)

Bulk-quantity Si nanowires synthesized by SiO sublimation. / Zhang, Y. F.; Tang, Y. H.; Lam, C. et al.
In: Journal of Crystal Growth, Vol. 212, No. 1, 2000, p. 115-118.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review