Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • H. Y. Peng
  • X. T. Zhou
  • N. Wang
  • Y. F. Zheng
  • L. S. Liao
  • W. S. Shi
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)263-270
Journal / PublicationChemical Physics Letters
Volume327
Issue number5-6
Publication statusPublished - 15 Sep 2000

Abstract

The bulk-quantity synthesis of single-crystal GaN nanowires has been achieved through a simple method of hot filament chemical vapor deposition without using a nanometer-sized catalyst. The microstructures and optical properties of GaN nanowires have been studied by electron microscopy and photoluminescence (PL) measurements at room temperature. The GaN nanowires had diameters of 5-12 nm and lengths of a few micrometers, and were highly pure. They possessed a hexagonal wurtzite structure and had a growth direction perpendicular to the {11̄01} plane. The PL spectra showed a broad emission peak centered at 420 nm.

Citation Format(s)

Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition. / Peng, H. Y.; Zhou, X. T.; Wang, N.; Zheng, Y. F.; Liao, L. S.; Shi, W. S.; Lee, C. S.; Lee, S. T.

In: Chemical Physics Letters, Vol. 327, No. 5-6, 15.09.2000, p. 263-270.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review