Bulk Heterojunction Polymer Memory Devices with Reduced Graphene Oxide as Electrodes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Juqing Liu
  • Zongyou Yin
  • Xiehong Cao
  • Fei Zhao
  • Anping Lin
  • Linghai Xie
  • Quli Fan
  • Freddy Boey
  • Wei Huang

Detail(s)

Original languageEnglish
Pages (from-to)3987-3992
Journal / PublicationACS Nano
Volume4
Issue number7
Online published11 Jun 2010
Publication statusPublished - 27 Jul 2010
Externally publishedYes

Abstract

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104-105) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device. © 2010 American Chemical Society.

Research Area(s)

  • bulk heterojunction, polymer memory, reduced graphene oxide, sheet resistance, write-once-read-many-times

Citation Format(s)

Bulk Heterojunction Polymer Memory Devices with Reduced Graphene Oxide as Electrodes. / Liu, Juqing; Yin, Zongyou; Cao, Xiehong et al.

In: ACS Nano, Vol. 4, No. 7, 27.07.2010, p. 3987-3992.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review