Broad-Band Photodetectors Based on Copper Indium Diselenide Quantum Dots in a Methylammonium Lead Iodide Perovskite Matrix

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

3 Scopus Citations
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Author(s)

  • Jiajia Ning
  • Mengyu Chen
  • Wenhong Yang
  • Stephen V. Kershaw
  • Ni Zhao
  • Shumin Xiao

Detail(s)

Original languageEnglish
Pages (from-to)35201-35210
Journal / PublicationACS Applied Materials and Interfaces
Volume12
Issue number31
Online published23 Jul 2020
Publication statusPublished - 5 Aug 2020

Abstract

Low-temperature solution-processed methylammonium lead iodide (MAPbI3) crystalline films have shown outstanding performance in optoelectronic devices. However, their high dark current and high noise equivalent power prevent their application in broad-band photodetectors. Here, we applied a facile solution-based antisolvent strategy to fabricate a hybrid structure of CuInSe2 quantum dots (CISe QDs) embedded into a MAPbI3 matrix, which not only enhances the photodetector responsivity, showing a large on/off ratio of 104 at 2 V bias compared with the bare perovskite films, but also significantly (for over 7 days) improves the device stability, with hydrophobic ligands on the CuInSe2 QDs acting as a barrier against the uptake of environmental moisture. MAPbI3/CISe QD-based lateral photodetectors exhibit high responsivities of >0.5 A/W and 10.4 mA/W in the visible and near-infrared regions, respectively, partly because of the formation of a type II interface between the respective semiconductors but most significantly because of the efficient trap-state passivation of the perovskite grain surfaces, and the reduction in the twinning-induced trap density, which stems from both CISe QDs and their organic ligands. A large specific detectivity of 2.2 × 1012 Jones at 525 nm illumination (1 μW/cm2), a fast fall time of 236 μs, and an extremely low noise equivalent power of 45 fW/Hz1/2 have been achieved. 

Research Area(s)

  • broad-band photodetector, CuInSe2, improved device stability, methylammonium lead iodide perovskite, optoelectronic devices, reduced trap density

Citation Format(s)

Broad-Band Photodetectors Based on Copper Indium Diselenide Quantum Dots in a Methylammonium Lead Iodide Perovskite Matrix. / Duan, Zonghui; Ning, Jiajia; Chen, Mengyu; Xiong, Yuan; Yang, Wenhong; Xiao, Fengping; Kershaw, Stephen V.; Zhao, Ni; Xiao, Shumin; Rogach, Andrey L.

In: ACS Applied Materials and Interfaces, Vol. 12, No. 31, 05.08.2020, p. 35201-35210.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review