Broadband multimodal emission in Sb-doped CaZnOS-layered semiconductors

Sb摻雜的CaZnOS層狀半導體中的寬頻多模發射

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xu Li
  • Yuantian Zheng
  • Ronghua Ma
  • Zefeng Huang
  • Chunfeng Wang
  • Mingju Zhu
  • Fuchun Jiang
  • Bolong Huang
  • Bohan Wang
  • Yu Wang
  • Dengfeng Peng

Detail(s)

Original languageEnglish
Pages (from-to)1329-1336
Number of pages8
Journal / PublicationScience China Materials
Volume65
Issue number5
Online published30 Nov 2021
Publication statusPublished - May 2022

Abstract

Mechanoluminescent (ML) smart materials are expected to be used in stress sensors, new displays, and advanced flexible optoelectronic devices, because of their unique mechanical-to-light energy conversion properties. However, the narrow-range ML emission characteristics of single materials limit their application scope. In this work, we report on the broadband multimodal emission in Sb-doped CaZnOS layered semiconductors. A series of CaZnOS layer-structured powders with different Sb3+ doping concentrations were synthesised using a high-temperature solid-phase method. The CaZnOS:Sb3+ phosphor achieved a wide range of ML spectra (400–900 nm), adjustable photoluminescence with double luminescent peaks located at 465 and 620 nm, and the X-ray-induced luminescence characteristics were systematically studied. We have also achieved ultra-broad warm white light ML emission of Sb3+ and Bi3+ co-doped samples. Therefore, it can be expected that these ML phosphors will be used in smart lighting, displays, visible stress sensors, and X-ray imaging and detections.
力致發光 (ML) 智慧材料由於其獨特的機械能-光能轉換特性, 有望用於應力感測器、新型顯示和先進的柔性光電器件. 然而, 單一材料的窄波長範圍ML發射特性限制了它們的應用範圍. 在這項工作中, 我們報導了Sb摻雜的CaZnOS層狀半導體中的寬頻多模態發射. 使用高溫固相法合成了一系列具有不同Sb3+摻雜濃度的CaZnOS層狀結構粉末. CaZnOS:Sb3+螢光粉實現了400–900 nm ML的寬譜發光範圍, 可調光致發光, 兩個發射峰位於465和620 nm, 我們還系統研究了X射線誘導發光特性. 我們還實現了Sb3+和Bi3+共摻雜樣品的超寬暖白光ML發射. 因此, 這些 ML 螢光粉將有望用於智慧照明、顯示、可見應力感測器以及 X 射線成像和檢測.

Research Area(s)

  • CaZnOS, doping, light emission, mechanoluminescence, semiconductors

Citation Format(s)

Broadband multimodal emission in Sb-doped CaZnOS-layered semiconductors. / Li, Xu; Zheng, Yuantian; Ma, Ronghua; Huang, Zefeng; Wang, Chunfeng; Zhu, Mingju; Jiang, Fuchun; Du, Yangyang; Chen, Xian; Huang, Bolong; Wang, Feng; Wang, Bohan; Wang, Yu; Peng, Dengfeng.

In: Science China Materials, Vol. 65, No. 5, 05.2022, p. 1329-1336.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review