Broadband Millimeter-Wave Frequency Mixer Based on Thin-Film Lithium Niobate Photonics

Xiangzhi Xie* (Co-first Author), Hanke Feng (Co-first Author), Yuansheng Tao, Yiwen Zhang, Yikun Chen, Ke Zhang, Zhaoxi Chen, Cheng Wang*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Abstract

Frequency mixers are fundamental components in modern wireless communication and radar systems, responsible for up- and down-conversion of target radio-frequency (RF) signals. Recently, photonic-assisted RF mixers have shown unique advantages over traditional electronic counterparts, including broad operational bandwidth, flat frequency response, and immunity to electromagnetic interference. However, current integrated photonic mixers face significant challenges in achieving efficient conversion at high frequencies, especially in millimeter-wave bands, due to the limitations of existing electro-optic (EO) modulators. Additionally, high-frequency local oscillators (LOs) in the millimeter-wave range are often difficult to obtain and expensive, leading to unsatis-factory cost and restricted operational bandwidth in practice. In this paper, we harness the exceptional EO property and scalability of thin-film lithium niobate (TFLN) photonic platform to implement a high-performance harmonic-reconfigurable millimeter-wave mixer. The TFLN photonic circuit integrates a broadband EO modulator that allows for extensive frequency coverage, and an EO frequency comb source that significantly reduces the required carrier frequency of the LO. We experimentally demonstrate fully re-configurable frequency down-conversion across a broad operational bandwidth ranging from 20 GHz to 67 GHz, with a large intermediate frequency of 20 GHz, as well as up-conversion to frequencies up to 110 GHz. Our integrated photonic mixing system shows dramatically improved bandwidth performance, along with competitive frequency conversion efficiency and spurious suppression ratio, positioning it as a promising solution for future millimeter-wave transceivers in next-generation communication and sensing systems.

© 2025 The Author(s)
Original languageEnglish
Article number0090462
Pages (from-to)0090462-1-0090462-10
JournalElectromagnetic Science
Volume3
Issue number1
DOIs
Publication statusPublished - Mar 2025

Funding

This work was supported by the Research Grants Council, University Grants Committee (Grant Nos. CityU 11212721, CityU 11204022, C1002-22Y, and N_CityU113/20), the Croucher Foundation (Grant No. 9509005), and City University of Hong Kong (Grant No. 9610682). The authors would like to thank the technical support of Mr. Chun Fai Yeung, Ms. Chan Olive, Mr. C. W. Lai, and Mr. Li Ho at the Nanosystem Fabrication Facility (NFF), Hong Kong University of Science and Technology, Hong Kong, China, for the stepper lithography and PECVD process. They thank Dr. Wing-Han Wong and Dr. Keeson Shum at City University of Hong Kong, Hong Kong, China, for their help in measurement and device fabrication.

Research Keywords

  • Integrated microwave photonics
  • Thin-film lithium niobate
  • Millimeter-wave frequency mixing

Publisher's Copyright Statement

  • This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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