Broadband characteristics of a parallel diode linearized amplifier

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
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Detail(s)

Original languageEnglish
Pages (from-to)82-83
Journal / PublicationMicrowave and Optical Technology Letters
Volume36
Issue number2
Publication statusPublished - 20 Jan 2003

Abstract

A compact broadband linearized amplifier connected to the base of the transistor was presented. A data rate of 384 Kb/s QPSK modulation format signal was used to analyze the performance of the broadband linearized amplifier. The analysis showed the reduction in spectral re-growth of 8-20 dB for the first sidelobe in the ferquency range of 0.8-2 GHz.

Research Area(s)

  • Broadband amplifer, Linearization, Power amplifier

Citation Format(s)

Broadband characteristics of a parallel diode linearized amplifier. / Mok, Ka Tsun; Chan, Wing Shing; Leung, Chun Kai; Yu, Chi Sun; Li, Chung Wai.

In: Microwave and Optical Technology Letters, Vol. 36, No. 2, 20.01.2003, p. 82-83.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review