Broadband characteristics of a parallel diode linearized amplifier

Ka Tsun Mok; Wing Shing Chan; Chun Kai Leung; Chi Sun Yu; Chung Wai Li

doi:10.1002/mop.10680

Broadband characteristics of a parallel diode linearized amplifier

Ka Tsun Mok, Wing Shing Chan, Chun Kai Leung, Chi Sun Yu, Chung Wai Li

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

A compact broadband linearized amplifier connected to the base of the transistor was presented. A data rate of 384 Kb/s QPSK modulation format signal was used to analyze the performance of the broadband linearized amplifier. The analysis showed the reduction in spectral re-growth of 8-20 dB for the first sidelobe in the ferquency range of 0.8-2 GHz.

Original language	English
Pages (from-to)	82-83
Journal	Microwave and Optical Technology Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1002/mop.10680
Publication status	Published - 20 Jan 2003

Research Keywords

Broadband amplifer
Linearization
Power amplifier

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title = "Broadband characteristics of a parallel diode linearized amplifier",

abstract = "A compact broadband linearized amplifier connected to the base of the transistor was presented. A data rate of 384 Kb/s QPSK modulation format signal was used to analyze the performance of the broadband linearized amplifier. The analysis showed the reduction in spectral re-growth of 8-20 dB for the first sidelobe in the ferquency range of 0.8-2 GHz.",

keywords = "Broadband amplifer, Linearization, Power amplifier",

author = "Mok, {Ka Tsun} and Chan, {Wing Shing} and Leung, {Chun Kai} and Yu, {Chi Sun} and Li, {Chung Wai}",

year = "2003",

month = jan,

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language = "English",

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journal = "Microwave and Optical Technology Letters",

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T1 - Broadband characteristics of a parallel diode linearized amplifier

AU - Mok, Ka Tsun

AU - Chan, Wing Shing

AU - Leung, Chun Kai

AU - Yu, Chi Sun

AU - Li, Chung Wai

PY - 2003/1/20

Y1 - 2003/1/20

N2 - A compact broadband linearized amplifier connected to the base of the transistor was presented. A data rate of 384 Kb/s QPSK modulation format signal was used to analyze the performance of the broadband linearized amplifier. The analysis showed the reduction in spectral re-growth of 8-20 dB for the first sidelobe in the ferquency range of 0.8-2 GHz.

AB - A compact broadband linearized amplifier connected to the base of the transistor was presented. A data rate of 384 Kb/s QPSK modulation format signal was used to analyze the performance of the broadband linearized amplifier. The analysis showed the reduction in spectral re-growth of 8-20 dB for the first sidelobe in the ferquency range of 0.8-2 GHz.

KW - Broadband amplifer

KW - Linearization

KW - Power amplifier

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037454775&origin=recordpage

U2 - 10.1002/mop.10680

DO - 10.1002/mop.10680

M3 - RGC 21 - Publication in refereed journal

SN - 0895-2477

VL - 36

SP - 82

EP - 83

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 2

ER -

Broadband characteristics of a parallel diode linearized amplifier

Abstract

Research Keywords

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