Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer

Wen Luo; Tao Yuan; Yue Kuo; Jiang Lu; Jiong Yan; Way Kuo

doi:10.1063/1.2335624

Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer

Wen Luo, Tao Yuan, Yue Kuo, Jiang Lu, Jiong Yan, Way Kuo

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

32 Citations (Scopus)

Abstract

Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. © 2006 American Institute of Physics.

Original language	English
Article number	72901
Journal	Applied Physics Letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2335624
Publication status	Published - 2006
Externally published	Yes

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title = "Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer",

abstract = "Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. {\textcopyright} 2006 American Institute of Physics.",

author = "Wen Luo and Tao Yuan and Yue Kuo and Jiang Lu and Jiong Yan and Way Kuo",

year = "2006",

doi = "10.1063/1.2335624",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

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TY - JOUR

T1 - Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer

AU - Luo, Wen

AU - Yuan, Tao

AU - Kuo, Yue

AU - Lu, Jiang

AU - Yan, Jiong

AU - Kuo, Way

PY - 2006

Y1 - 2006

N2 - Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. © 2006 American Institute of Physics.

AB - Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. © 2006 American Institute of Physics.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33747458105&origin=recordpage

U2 - 10.1063/1.2335624

DO - 10.1063/1.2335624

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 72901

ER -

Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer

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