Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Jui-Wei Hus
  • Chien-Chia Chen
  • Ming-Jui Lee
  • Hsueh-Hsing Liu
  • Jen-Inn Chyi
  • Michael R. S. Huang
  • Chuan-Pu Liu
  • Tzu-Chiao Wei
  • Kun-Yu Lai

Detail(s)

Original languageEnglish
Pages (from-to)4845-4850
Journal / PublicationAdvanced Materials
Volume27
Issue number33
Online published15 Jul 2015
Publication statusPublished - 2 Sept 2015
Externally publishedYes

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Research Area(s)

  • GaN, nano-heteroepitaxy, quantum well, semipolar, Si substrate

Citation Format(s)

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. / Hus, Jui-Wei; Chen, Chien-Chia; Lee, Ming-Jui et al.
In: Advanced Materials, Vol. 27, No. 33, 02.09.2015, p. 4845-4850.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review