Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui-Wei Hus; Chien-Chia Chen; Ming-Jui Lee; Hsueh-Hsing Liu; Jen-Inn Chyi; Michael R. S. Huang; Chuan-Pu Liu; Tzu-Chiao Wei; Jr-Hau He; Kun-Yu Lai

doi:10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui-Wei Hus
, Chien-Chia Chen
, Ming-Jui Lee
, Hsueh-Hsing Liu
, Jen-Inn Chyi
, Michael R. S. Huang
, Chuan-Pu Liu
, Tzu-Chiao Wei
, Jr-Hau He
, Kun-Yu Lai^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Original language	English
Pages (from-to)	4845-4850
Journal	Advanced Materials
Volume	27
Issue number	33
Online published	15 Jul 2015
DOIs	https://doi.org/10.1002/adma.201501538
Publication status	Published - 2 Sept 2015
Externally published	Yes

Research Keywords

GaN
nano-heteroepitaxy
quantum well
semipolar
Si substrate

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10.1002/adma.201501538

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title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",

abstract = "Semipolar \{101¯1\} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.",

keywords = "GaN, nano-heteroepitaxy, quantum well, semipolar, Si substrate",

author = "Jui-Wei Hus and Chien-Chia Chen and Ming-Jui Lee and Hsueh-Hsing Liu and Jen-Inn Chyi and Huang, \{Michael R. S.\} and Chuan-Pu Liu and Tzu-Chiao Wei and Jr-Hau He and Kun-Yu Lai",

year = "2015",

month = sep,

day = "2",

doi = "10.1002/adma.201501538",

language = "English",

volume = "27",

pages = "4845--4850",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "33",

}

TY - JOUR

T1 - Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

AU - Hus, Jui-Wei

AU - Chen, Chien-Chia

AU - Lee, Ming-Jui

AU - Liu, Hsueh-Hsing

AU - Chyi, Jen-Inn

AU - Huang, Michael R. S.

AU - Liu, Chuan-Pu

AU - Wei, Tzu-Chiao

AU - He, Jr-Hau

AU - Lai, Kun-Yu

PY - 2015/9/2

Y1 - 2015/9/2

N2 - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

AB - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

KW - GaN

KW - nano-heteroepitaxy

KW - quantum well

KW - semipolar

KW - Si substrate

UR - https://www.scopus.com/pages/publications/84940707308

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84940707308&origin=recordpage

U2 - 10.1002/adma.201501538

DO - 10.1002/adma.201501538

M3 - RGC 21 - Publication in refereed journal

C2 - 26178685

SN - 0935-9648

VL - 27

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Abstract

Research Keywords

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