TY - JOUR
T1 - Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfaces
AU - Cernetic, Nathan
AU - Acton, Orb
AU - Weidner, Tobias
AU - Hutchins, Daniel O.
AU - Baio, Joe E.
AU - Ma, Hong
AU - Jen, Alex K.-Y.
PY - 2012/12
Y1 - 2012/12
N2 - Low-voltage, n-type organic field effect transistors (OFETs) with simultaneously modified bottom-contact (BC) electrodes and dielectric were compared to their top-contact (TC) counterparts. The devices modified with 6-phenoxyhexylphosphonic acid (Ph6PA) self-assembled monolayer (SAM) showed similar performance, morphology, and contact resistance. Electron mobility of C60 devices were 0.212 and 0.320 cm2 V-1 s -1 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) devices were 0.04 and 0.06 cm2 V-1 s-1 for TC and BC devices, respectively. Low contact resistance between 11 and 45 k cm was found regardless of device architecture or n-type semiconductor used. This work shows it is possible to fabricate solution processable low-voltage bottom-contact devices with performance that is similar or better than their top-contact counterparts without the addition of complex and time-consuming processing steps. © 2012 Elsevier B.V. All rights reserved.
AB - Low-voltage, n-type organic field effect transistors (OFETs) with simultaneously modified bottom-contact (BC) electrodes and dielectric were compared to their top-contact (TC) counterparts. The devices modified with 6-phenoxyhexylphosphonic acid (Ph6PA) self-assembled monolayer (SAM) showed similar performance, morphology, and contact resistance. Electron mobility of C60 devices were 0.212 and 0.320 cm2 V-1 s -1 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) devices were 0.04 and 0.06 cm2 V-1 s-1 for TC and BC devices, respectively. Low contact resistance between 11 and 45 k cm was found regardless of device architecture or n-type semiconductor used. This work shows it is possible to fabricate solution processable low-voltage bottom-contact devices with performance that is similar or better than their top-contact counterparts without the addition of complex and time-consuming processing steps. © 2012 Elsevier B.V. All rights reserved.
KW - Bottom-contact
KW - Contact resistance
KW - Organic field effect transistor (OFET)
KW - Self-assembled monolayer
KW - Simultaneous modification
KW - Small molecule organic semiconductor
UR - http://www.scopus.com/inward/record.url?scp=84868243682&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84868243682&origin=recordpage
U2 - 10.1016/j.orgel.2012.09.018
DO - 10.1016/j.orgel.2012.09.018
M3 - RGC 21 - Publication in refereed journal
SN - 1566-1199
VL - 13
SP - 3226
EP - 3233
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 12
ER -