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Boron nanowires synthesized by laser ablation at high temperature

  • X. M. Meng
  • , J. Q. Hu
  • , Y. Jiang
  • , C. S. Lee
  • , S. T. Lee

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Boron nanowires have been synthesized by laser ablation at high temperature. The as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS). The boron nanowires have lengths of several tens of micrometers long and diameters of 30-60 nm. The effects of the synthesis conditions on the formation of the boron nanowires were investigated and possible growth mechanisms of the boron nanowires are discussed. © 2003 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)825-828
JournalChemical Physics Letters
Volume370
Issue number5-6
DOIs
Publication statusPublished - 21 Mar 2003

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