Boron contaminations and their kinetics in Ni3(Si,Ti) alloys

T. Takasugi, C. T. Liu, L. Heatherly, E. H. Lee, E. P. George

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The sources of boron contamination in Ni3(Si,Ti) alloys originally prepared as boron-free alloys in two different places were determined using an Auger instrument. Based on the correlation between the detected grain boundary compositions and the adopted processings, the cross-annealings with boron-doped alloys and annealings in a previously boron-contaminated furnace were identified as the possible sources of the boron contamination. Also, a simulation of the boron contamination where a boron-free Ni3(Si,Ti) alloy was cross-annealed in vacuum with a boron-doped Ni3(Si,Ti) alloy was performed. The boron penetration from the alloy surface was measured, and the corresponding diffusion coefficient of boron was estimated. Based on the obtained results, some implications are discussed. © 1998 Published by Elsevier Science Limited. All rights reserved.
Original languageEnglish
Pages (from-to)369-377
JournalIntermetallics
Volume6
Issue number5
DOIs
Publication statusPublished - Aug 1998
Externally publishedYes

Research Keywords

  • A. Silicides, various
  • B. Diffusion
  • C. Interstitial content, control
  • D. Grain boundaries, structure
  • F. Electron microprobe

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