Abstract
The sources of boron contamination in Ni3(Si,Ti) alloys originally prepared as boron-free alloys in two different places were determined using an Auger instrument. Based on the correlation between the detected grain boundary compositions and the adopted processings, the cross-annealings with boron-doped alloys and annealings in a previously boron-contaminated furnace were identified as the possible sources of the boron contamination. Also, a simulation of the boron contamination where a boron-free Ni3(Si,Ti) alloy was cross-annealed in vacuum with a boron-doped Ni3(Si,Ti) alloy was performed. The boron penetration from the alloy surface was measured, and the corresponding diffusion coefficient of boron was estimated. Based on the obtained results, some implications are discussed. © 1998 Published by Elsevier Science Limited. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 369-377 |
| Journal | Intermetallics |
| Volume | 6 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Aug 1998 |
| Externally published | Yes |
Research Keywords
- A. Silicides, various
- B. Diffusion
- C. Interstitial content, control
- D. Grain boundaries, structure
- F. Electron microprobe
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