Boron carbonitride nanojunctions

J. D. Guo; C. Y. Zhi; X. D. Bai; E. G. Wang

doi:10.1063/1.1431692

Boron carbonitride nanojunctions

J. D. Guo, C. Y. Zhi, X. D. Bai, E. G. Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

46 Citations (Scopus)

Abstract

Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	124-126
Journal	Applied Physics Letters
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.1431692
Publication status	Published - 7 Jan 2002
Externally published	Yes

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abstract = "Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. {\textcopyright} 2002 American Institute of Physics.",

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AU - Guo, J. D.

AU - Zhi, C. Y.

AU - Bai, X. D.

AU - Wang, E. G.

PY - 2002/1/7

Y1 - 2002/1/7

N2 - Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.

AB - Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.

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DO - 10.1063/1.1431692

M3 - RGC 21 - Publication in refereed journal

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SP - 124

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Boron carbonitride nanojunctions

Abstract

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